Optical properties of xenon implanted CuInSe2 by photoacoustic spectroscopy
Identifieur interne : 001760 ( Main/Repository ); précédent : 001759; suivant : 001761Optical properties of xenon implanted CuInSe2 by photoacoustic spectroscopy
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Abstract
A theoretical relation is derived for the normalized photoacoustic amplitude signal of a gas-coupled cell for the case of double-layer solid samples with particular application given to ion implanted semiconductors. Numerical estimates for a solar cell of the type CdS/CuinSe2 based on experimental measured data of these compounds are given to illustrate the photoacoustic effect originating from double-layer samples. In application to ion implanted semiconductors, we show that the absorption coefficient of the implanted layer can be very easily extracted by photoacoustic spectroscopy if the absorption coefficient of the untreated substrate is known. We also present the optical properties results obtained from the analysis of the effect of xenon implantation into CuInSe2 single crystals with the energy of 40 keV and a dose of 5 x 1016 ions/cm2.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical properties of xenon implanted CuInSe<sub>2</sub> by photoacoustic spectroscopy</title><author><name sortKey="Satour, F Z" uniqKey="Satour F">F. Z. Satour</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire: Croissance et Caractérisation de Nouveaux Semiconducteurs, Département d'Electronique, Faculté de Technologie, Université Ferhat Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>19000 Sétif</wicri:noRegion></affiliation></author><author><name sortKey="Zegadi, A" uniqKey="Zegadi A">A. Zegadi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire: Croissance et Caractérisation de Nouveaux Semiconducteurs, Département d'Electronique, Faculté de Technologie, Université Ferhat Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>19000 Sétif</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0197541</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0197541 INIST</idno><idno type="RBID">Pascal:12-0197541</idno><idno type="wicri:Area/Main/Corpus">001E54</idno><idno type="wicri:Area/Main/Repository">001760</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-2313</idno><title level="j" type="abbreviated">J. lumin.</title><title level="j" type="main">Journal of luminescence</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Chalcopyrite</term><term>Computerized simulation</term><term>Copper Indium Selenides Mixed</term><term>Defect states</term><term>Energy-level transitions</term><term>Impurity distribution</term><term>Ion implantation</term><term>Monocrystals</term><term>Photoacoustic effect</term><term>Semiconductor materials</term><term>Xenon additions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition xénon</term><term>Distribution impureté</term><term>Effet photoacoustique</term><term>Implantation ion</term><term>Simulation ordinateur</term><term>Coefficient absorption</term><term>Etat défaut</term><term>Transition niveau énergie</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>Semiconducteur</term><term>Monocristal</term><term>CuInSe2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A theoretical relation is derived for the normalized photoacoustic amplitude signal of a gas-coupled cell for the case of double-layer solid samples with particular application given to ion implanted semiconductors. Numerical estimates for a solar cell of the type CdS/CuinSe<sub>2</sub> based on experimental measured data of these compounds are given to illustrate the photoacoustic effect originating from double-layer samples. In application to ion implanted semiconductors, we show that the absorption coefficient of the implanted layer can be very easily extracted by photoacoustic spectroscopy if the absorption coefficient of the untreated substrate is known. We also present the optical properties results obtained from the analysis of the effect of xenon implantation into CuInSe<sub>2</sub> single crystals with the energy of 40 keV and a dose of 5 x 10<sup>16</sup> ions/cm<sup>2</sup>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-2313</s0></fA01><fA02 i1="01"><s0>JLUMA8</s0></fA02><fA03 i2="1"><s0>J. lumin.</s0></fA03><fA05><s2>132</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical properties of xenon implanted CuInSe<sub>2</sub> by photoacoustic spectroscopy</s1></fA08><fA11 i1="01" i2="1"><s1>SATOUR (F. Z.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZEGADI (A.)</s1></fA11><fA14 i1="01"><s1>Laboratoire: Croissance et Caractérisation de Nouveaux Semiconducteurs, Département d'Electronique, Faculté de Technologie, Université Ferhat Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>1688-1694</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14666</s2><s5>354000194675970140</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0197541</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of luminescence</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A theoretical relation is derived for the normalized photoacoustic amplitude signal of a gas-coupled cell for the case of double-layer solid samples with particular application given to ion implanted semiconductors. Numerical estimates for a solar cell of the type CdS/CuinSe<sub>2</sub> based on experimental measured data of these compounds are given to illustrate the photoacoustic effect originating from double-layer samples. In application to ion implanted semiconductors, we show that the absorption coefficient of the implanted layer can be very easily extracted by photoacoustic spectroscopy if the absorption coefficient of the untreated substrate is known. We also present the optical properties results obtained from the analysis of the effect of xenon implantation into CuInSe<sub>2</sub> single crystals with the energy of 40 keV and a dose of 5 x 10<sup>16</sup> ions/cm<sup>2</sup>.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H20H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Addition xénon</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Xenon additions</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Distribution impureté</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Impurity distribution</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Effet photoacoustique</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Photoacoustic effect</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Implantation ion</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Ion implantation</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Simulation ordinateur</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Computerized simulation</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Coefficient absorption</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Absorption coefficients</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etat défaut</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Defect states</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Transition niveau énergie</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Energy-level transitions</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>15</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>19</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>19</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Monocristal</s0><s5>21</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Monocrystals</s0><s5>21</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>156</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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